SI5857DU MOSFET Transistor

The SI5857DU is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI5857DU transistor as follows.

SI5857DU Transistor Specification

Transistor Code		SI5857DU
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		POWERPAK
Transistor SMD Code		JA*
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.058Ohm
Power Dissipation (Maximum)	PD	2.3W
Drain-Source Capacitance		125pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		42nS
Gate-Threshold Voltage (Maximum)		1.5V

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