SI5855CDC MOSFET Transistor

The SI5855CDC is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI5855CDC transistor as follows.

SI5855CDC Transistor Specification

Transistor Code		SI5855CDC
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		1206-8
Transistor SMD Code		JG*
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	2.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.144Ohm
Power Dissipation (Maximum)	PD	1.3W
Drain-Source Capacitance		60pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		34nS
Gate-Threshold Voltage (Maximum)		1V

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