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SI5853DDC MOSFET Transistor

The SI5853DDC is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI5853DDC transistor as follows.

Circuit diagram symbol of the SI5853DDC transistor

SI5853DDC Transistor Specification

Transistor Code SI5853DDC
Transistor Type MOSFET
Control Channel Type P-Channel
Package 1206-8
Transistor SMD Code JH*
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 8V
Drain Current (Maximum) ID 2.9A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.105Ohm
Power Dissipation (Maximum) PD 1.3W
Drain-Source Capacitance 60pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 17nS
Gate-Threshold Voltage (Maximum) 1V

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