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SI5853CDC MOSFET Transistor

The SI5853CDC is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI5853CDC transistor as follows.

Circuit diagram symbol of the SI5853CDC transistor

SI5853CDC Transistor Specification

Transistor Code SI5853CDC
Transistor Type MOSFET
Control Channel Type P-Channel
Package 1206-8
Transistor SMD Code JF*
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 8V
Drain Current (Maximum) ID 2.9A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.104Ohm
Power Dissipation (Maximum) PD 1.5W
Drain-Source Capacitance 65pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 42nS
Gate-Threshold Voltage (Maximum) 1V

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