SI5517DU MOSFET Transistor

The SI5517DU is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI5517DU transistor as follows.

SI5517DU Transistor Specification

Transistor Code		SI5517DU
Transistor Type		MOSFET
Control Channel Type		NP-Channel
Package		POWERPAK
Transistor SMD Code		EA*
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	7.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.039Ohm
Power Dissipation (Maximum)	PD	2.3W
Drain-Source Capacitance		100pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		65nS
Gate-Threshold Voltage (Maximum)		1V

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