SI5513CDC MOSFET Transistor

The SI5513CDC is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI5513CDC transistor as follows.

SI5513CDC Transistor Specification

Transistor Code		SI5513CDC
Transistor Type		MOSFET
Control Channel Type		NP-Channel
Package		1206-8
Transistor SMD Code		EG*
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.055Ohm
Power Dissipation (Maximum)	PD	1.7W
Drain-Source Capacitance		65pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		10nS
Gate-Threshold Voltage (Maximum)		1.5V

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