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SI5475DC MOSFET Transistor

The SI5475DC is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI5475DC transistor as follows.

Circuit diagram symbol of the SI5475DC transistor

SI5475DC Transistor Specification

Transistor Code SI5475DC
Transistor Type MOSFET
Control Channel Type P-Channel
Package 1206-8
Transistor SMD Code BF*
Drain-Source Voltage (Maximum) VDS 12V
Gate-Source Voltage (Maximum) VGS 8V
Drain Current (Maximum) ID 5.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.031Ohm
Power Dissipation (Maximum) PD 1.3W
Operating Junction Temperature (Maximum) 150°C
Rise Time 20nS
Gate-Threshold Voltage (Maximum) 0.45V

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