SI5463EDC MOSFET Transistor

The SI5463EDC is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI5463EDC transistor as follows.

SI5463EDC Transistor Specification

Transistor Code		SI5463EDC
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		1206-8
Transistor SMD Code		LB*
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	3.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.062Ohm
Power Dissipation (Maximum)	PD	1.25W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		0.45V

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