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SI5457DC MOSFET Transistor

The SI5457DC is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI5457DC transistor as follows.

Circuit diagram symbol of the SI5457DC transistor

SI5457DC Transistor Specification

Transistor Code SI5457DC
Transistor Type MOSFET
Control Channel Type P-Channel
Package 1206-8
Transistor SMD Code BT*
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 6A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.036Ohm
Power Dissipation (Maximum) PD 2.3W
Drain-Source Capacitance 225pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 20nS
Gate-Threshold Voltage (Maximum) 1.4V

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