SI5429DU MOSFET Transistor

The SI5429DU is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI5429DU transistor as follows.

SI5429DU Transistor Specification

Transistor Code		SI5429DU
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		POWERPAK
Transistor SMD Code		BH*
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	11.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.015Ohm
Power Dissipation (Maximum)	PD	3.1W
Drain-Source Capacitance		275pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		25nS
Gate-Threshold Voltage (Maximum)		2.2V

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