SI5415AEDU MOSFET Transistor

The SI5415AEDU is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI5415AEDU transistor as follows.

SI5415AEDU Transistor Specification

Transistor Code		SI5415AEDU
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		POWERPAK
Transistor SMD Code		LC*
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	15A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0096Ohm
Power Dissipation (Maximum)	PD	3.1W
Drain-Source Capacitance		445pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		45nS
Gate-Threshold Voltage (Maximum)		1V

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