SI5411EDU MOSFET Transistor

The SI5411EDU is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI5411EDU transistor as follows.

SI5411EDU Transistor Specification

Transistor Code		SI5411EDU
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		POWERPAK
Transistor SMD Code		LB*
Drain-Source Voltage (Maximum)	VDS	12V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	16.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0082Ohm
Power Dissipation (Maximum)	PD	3.1W
Drain-Source Capacitance		860pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		30nS
Gate-Threshold Voltage (Maximum)		0.9V

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