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SI5406CDC MOSFET Transistor

The SI5406CDC is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI5406CDC transistor as follows.

Circuit diagram symbol of the SI5406CDC transistor

SI5406CDC Transistor Specification

Transistor Code SI5406CDC
Transistor Type MOSFET
Control Channel Type N-Channel
Package 1206-8
Transistor SMD Code AH*
Drain-Source Voltage (Maximum) VDS 12V
Gate-Source Voltage (Maximum) VGS 8V
Drain Current (Maximum) ID 6A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.02Ohm
Power Dissipation (Maximum) PD 2.3W
Drain-Source Capacitance 290pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 10nS
Gate-Threshold Voltage (Maximum) 1V

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