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SI5403DC MOSFET Transistor

The SI5403DC is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI5403DC transistor as follows.

Circuit diagram symbol of the SI5403DC transistor

SI5403DC Transistor Specification

Transistor Code SI5403DC
Transistor Type MOSFET
Control Channel Type P-Channel
Package 1206-8
Transistor SMD Code BQ*
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 6A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.03Ohm
Power Dissipation (Maximum) PD 2.5W
Drain-Source Capacitance 215pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 140nS
Gate-Threshold Voltage (Maximum) 3V

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