SI4884BDY MOSFET Transistor

The SI4884BDY is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI4884BDY transistor as follows.

SI4884BDY Transistor Specification

Transistor Code		SI4884BDY
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO-8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	12.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.009Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		295pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		160nS
Gate-Threshold Voltage (Maximum)		3V

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