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SI4874BDY MOSFET Transistor

The SI4874BDY is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI4874BDY transistor as follows.

Circuit diagram symbol of the SI4874BDY transistor

SI4874BDY Transistor Specification

Transistor Code SI4874BDY
Transistor Type MOSFET
Control Channel Type N-Channel
Package SO-8
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 12A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.007Ohm
Power Dissipation (Maximum) PD 1.6W
Drain-Source Capacitance 585pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 10nS
Gate-Threshold Voltage (Maximum) 3V

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