SI4866BDY MOSFET Transistor

The SI4866BDY is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI4866BDY transistor as follows.

SI4866BDY Transistor Specification

Transistor Code		SI4866BDY
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO-8
Drain-Source Voltage (Maximum)	VDS	12V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	16.1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0053Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		1305pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		18nS
Gate-Threshold Voltage (Maximum)		1V

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