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SI4842BDY MOSFET Transistor

The SI4842BDY is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI4842BDY transistor as follows.

Circuit diagram symbol of the SI4842BDY transistor

SI4842BDY Transistor Specification

Transistor Code SI4842BDY
Transistor Type MOSFET
Control Channel Type N-Channel
Package SO-8
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 20A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0042Ohm
Power Dissipation (Maximum) PD 3W
Drain-Source Capacitance 635pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 190nS
Gate-Threshold Voltage (Maximum) 3V

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