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SI4833ADY MOSFET Transistor

The SI4833ADY is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI4833ADY transistor as follows.

Circuit diagram symbol of the SI4833ADY transistor

SI4833ADY Transistor Specification

Transistor Code SI4833ADY
Transistor Type MOSFET
Control Channel Type P-Channel
Package P-CHANNEL, 30 V (D-S
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 3.6A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.072Ohm
Power Dissipation (Maximum) PD 1.75W
Operating Junction Temperature (Maximum) 150°C
Rise Time 11nS
Gate-Threshold Voltage (Maximum) 3V

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