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SI4800BDY MOSFET Transistor

The SI4800BDY is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI4800BDY transistor as follows.

Circuit diagram symbol of the SI4800BDY transistor

SI4800BDY Transistor Specification

Transistor Code SI4800BDY
Transistor Type MOSFET
Control Channel Type N-Channel
Package SO-8
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 6.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0185Ohm
Power Dissipation (Maximum) PD 1.3W
Operating Junction Temperature (Maximum) 150°C
Rise Time 12nS
Gate-Threshold Voltage (Maximum) 1.8V

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