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SI4686DY MOSFET Transistor

The SI4686DY is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI4686DY transistor as follows.

Circuit diagram symbol of the SI4686DY transistor

SI4686DY Transistor Specification

Transistor Code SI4686DY
Transistor Type MOSFET
Control Channel Type N-Channel
Package SO-8
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 13.8A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0095Ohm
Power Dissipation (Maximum) PD 3W
Drain-Source Capacitance 230pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 20nS
Gate-Threshold Voltage (Maximum) 3V

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