SI4463CDY MOSFET Transistor

The SI4463CDY is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI4463CDY transistor as follows.

SI4463CDY Transistor Specification

Transistor Code		SI4463CDY
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SO-8
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	13.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.008Ohm
Power Dissipation (Maximum)	PD	2.7W
Drain-Source Capacitance		840pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		10nS
Gate-Threshold Voltage (Maximum)		1.4V

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