SI4431CDY MOSFET Transistor

The SI4431CDY is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI4431CDY transistor as follows.

SI4431CDY Transistor Specification

Transistor Code		SI4431CDY
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SO-8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.032Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		180pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		13nS
Gate-Threshold Voltage (Maximum)		2.5V

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