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SI4431CDY MOSFET Transistor

The SI4431CDY is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI4431CDY transistor as follows.

Circuit diagram symbol of the SI4431CDY transistor

SI4431CDY Transistor Specification

Transistor Code SI4431CDY
Transistor Type MOSFET
Control Channel Type P-Channel
Package SO-8
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 7A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.032Ohm
Power Dissipation (Maximum) PD 2.5W
Drain-Source Capacitance 180pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 13nS
Gate-Threshold Voltage (Maximum) 2.5V

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