SI4410DYPBF MOSFET Transistor

The SI4410DYPBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI4410DYPBF transistor as follows.

SI4410DYPBF Transistor Specification

Transistor Code		SI4410DYPBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO-8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0135Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		739pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		7.7nS
Gate-Threshold Voltage (Maximum)		1V

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