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SI4410DYPBF MOSFET Transistor

The SI4410DYPBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI4410DYPBF transistor as follows.

Circuit diagram symbol of the SI4410DYPBF transistor

SI4410DYPBF Transistor Specification

Transistor Code SI4410DYPBF
Transistor Type MOSFET
Control Channel Type N-Channel
Package SO-8
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 10A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0135Ohm
Power Dissipation (Maximum) PD 2.5W
Drain-Source Capacitance 739pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 7.7nS
Gate-Threshold Voltage (Maximum) 1V

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