SI4190DY MOSFET Transistor

The SI4190DY is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI4190DY transistor as follows.

SI4190DY Transistor Specification

Transistor Code		SI4190DY
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO-8
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	13.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0088Ohm
Power Dissipation (Maximum)	PD	3.5W
Drain-Source Capacitance		1120pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		13nS
Gate-Threshold Voltage (Maximum)		2.8V

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