SI4166DY MOSFET Transistor

The SI4166DY is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI4166DY transistor as follows.

SI4166DY Transistor Specification

Transistor Code		SI4166DY
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO-8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	20.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0039Ohm
Power Dissipation (Maximum)	PD	3W
Drain-Source Capacitance		540pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		19nS
Gate-Threshold Voltage (Maximum)		2.4V

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