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SI4164DY MOSFET Transistor

The SI4164DY is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI4164DY transistor as follows.

Circuit diagram symbol of the SI4164DY transistor

SI4164DY Transistor Specification

Transistor Code SI4164DY
Transistor Type MOSFET
Control Channel Type N-Channel
Package SO-8
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 21.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0032Ohm
Power Dissipation (Maximum) PD 3W
Drain-Source Capacitance 650pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 16nS
Gate-Threshold Voltage (Maximum) 2.5V

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