SI4162DY MOSFET Transistor

The SI4162DY is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI4162DY transistor as follows.

SI4162DY Transistor Specification

Transistor Code		SI4162DY
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO-8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	13.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0079Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		260pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		15nS
Gate-Threshold Voltage (Maximum)		3V

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