SI4126DY MOSFET Transistor

The SI4126DY is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI4126DY transistor as follows.

SI4126DY Transistor Specification

Transistor Code		SI4126DY
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO-8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	26.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.00275Ohm
Power Dissipation (Maximum)	PD	3.5W
Drain-Source Capacitance		760pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		20nS
Gate-Threshold Voltage (Maximum)		2.5V

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