SI4110DY MOSFET Transistor

The SI4110DY is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI4110DY transistor as follows.

SI4110DY Transistor Specification

Transistor Code		SI4110DY
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO-8
Drain-Source Voltage (Maximum)	VDS	80V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	11.7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.013Ohm
Power Dissipation (Maximum)	PD	3.6W
Drain-Source Capacitance		260pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		10nS
Gate-Threshold Voltage (Maximum)		4V

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