SI4108DY MOSFET Transistor

The SI4108DY is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI4108DY transistor as follows.

SI4108DY Transistor Specification

Transistor Code		SI4108DY
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO-8
Drain-Source Voltage (Maximum)	VDS	75V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	13.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0098Ohm
Power Dissipation (Maximum)	PD	3.6W
Drain-Source Capacitance		290pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		11nS
Gate-Threshold Voltage (Maximum)		4V

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