SI3879DV MOSFET Transistor

The SI3879DV is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI3879DV transistor as follows.

SI3879DV Transistor Specification

Transistor Code		SI3879DV
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TSOP-6
Transistor SMD Code		IG
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.07Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		132pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		54nS
Gate-Threshold Voltage (Maximum)		1.5V

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