SI3812DV MOSFET Transistor

The SI3812DV is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI3812DV transistor as follows.

SI3812DV Transistor Specification

Transistor Code		SI3812DV
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TSOP6
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	2.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.125Ohm
Power Dissipation (Maximum)	PD	1.15W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		0.6V

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