SI3493BDV MOSFET Transistor

The SI3493BDV is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI3493BDV transistor as follows.

SI3493BDV Transistor Specification

Transistor Code		SI3493BDV
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TSOP-6
Transistor SMD Code		AK*
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0275Ohm
Power Dissipation (Maximum)	PD	2.08W
Drain-Source Capacitance		285pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		72nS
Gate-Threshold Voltage (Maximum)		0.9V

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