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SI3483CDV MOSFET Transistor

The SI3483CDV is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI3483CDV transistor as follows.

Circuit diagram symbol of the SI3483CDV transistor

SI3483CDV Transistor Specification

Transistor Code SI3483CDV
Transistor Type MOSFET
Control Channel Type P-Channel
Package TSOP-6
Transistor SMD Code AU*
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 6.1A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.034Ohm
Power Dissipation (Maximum) PD 2W
Drain-Source Capacitance 170pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 135nS
Gate-Threshold Voltage (Maximum) 3V

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