SI3477DV MOSFET Transistor

The SI3477DV is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI3477DV transistor as follows.

SI3477DV Transistor Specification

Transistor Code		SI3477DV
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TSOP-6
Transistor SMD Code		BB*
Drain-Source Voltage (Maximum)	VDS	12V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0175Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		620pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		30nS
Gate-Threshold Voltage (Maximum)		1V

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