SI3476DV MOSFET Transistor

The SI3476DV is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI3476DV transistor as follows.

SI3476DV Transistor Specification

Transistor Code		SI3476DV
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TSOP-6
Transistor SMD Code		BG*
Drain-Source Voltage (Maximum)	VDS	80V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	3.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.093Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		116pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		4nS
Gate-Threshold Voltage (Maximum)		3V

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