SI3475DV MOSFET Transistor

The SI3475DV is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI3475DV transistor as follows.

SI3475DV Transistor Specification

Transistor Code		SI3475DV
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT163
Transistor SMD Code		AI*
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	0.95A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.61Ohm
Power Dissipation (Maximum)	PD	3.2W
Drain-Source Capacitance		26pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		11nS
Gate-Threshold Voltage (Maximum)		4V

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