SI3459BDV MOSFET Transistor

The SI3459BDV is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI3459BDV transistor as follows.

SI3459BDV Transistor Specification

Transistor Code		SI3459BDV
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TSOP-6
Transistor SMD Code		AS*
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	2.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.216Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		40pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		60nS
Gate-Threshold Voltage (Maximum)		3V

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