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SI3447CDV MOSFET Transistor

The SI3447CDV is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI3447CDV transistor as follows.

Circuit diagram symbol of the SI3447CDV transistor

SI3447CDV Transistor Specification

Transistor Code SI3447CDV
Transistor Type MOSFET
Control Channel Type P-Channel
Package TSOP-6
Transistor SMD Code AO*
Drain-Source Voltage (Maximum) VDS 12V
Gate-Source Voltage (Maximum) VGS 8V
Drain Current (Maximum) ID 6.3A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.036Ohm
Power Dissipation (Maximum) PD 2W
Drain-Source Capacitance 260pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 15nS
Gate-Threshold Voltage (Maximum) 1V

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