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SI3447BDV MOSFET Transistor

The SI3447BDV is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI3447BDV transistor as follows.

Circuit diagram symbol of the SI3447BDV transistor

SI3447BDV Transistor Specification

Transistor Code SI3447BDV
Transistor Type MOSFET
Control Channel Type P-Channel
Package TSOP-6
Transistor SMD Code B7*
Drain-Source Voltage (Maximum) VDS 12V
Gate-Source Voltage (Maximum) VGS 8V
Drain Current (Maximum) ID 4.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.04Ohm
Power Dissipation (Maximum) PD 1.1W
Operating Junction Temperature (Maximum) 150°C
Rise Time 46nS
Gate-Threshold Voltage (Maximum) 1V

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