SI3442BDV MOSFET Transistor

The SI3442BDV is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI3442BDV transistor as follows.

SI3442BDV Transistor Specification

Transistor Code		SI3442BDV
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TSOP-6
Transistor SMD Code		2B*
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.057Ohm
Power Dissipation (Maximum)	PD	0.86W
Drain-Source Capacitance		75pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		50nS
Gate-Threshold Voltage (Maximum)		1.8V

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