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SI3429EDV MOSFET Transistor

The SI3429EDV is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI3429EDV transistor as follows.

Circuit diagram symbol of the SI3429EDV transistor

SI3429EDV Transistor Specification

Transistor Code SI3429EDV
Transistor Type MOSFET
Control Channel Type P-Channel
Package TSOP-6
Transistor SMD Code BM
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 8V
Drain Current (Maximum) ID 8A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.021Ohm
Power Dissipation (Maximum) PD 2W
Drain-Source Capacitance 395pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 17nS
Gate-Threshold Voltage (Maximum) 1V

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