SI3424DV MOSFET Transistor

The SI3424DV is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI3424DV transistor as follows.

SI3424DV Transistor Specification

Transistor Code		SI3424DV
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TSOP-6
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.028Ohm
Power Dissipation (Maximum)	PD	1.14W
Operating Junction Temperature (Maximum)		150°C
Rise Time		10nS
Gate-Threshold Voltage (Maximum)		0.8V

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