SI3127DV MOSFET Transistor

The SI3127DV is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI3127DV transistor as follows.

SI3127DV Transistor Specification

Transistor Code		SI3127DV
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TSOP-6
Transistor SMD Code		BL
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	3.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.089Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		88pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		6nS
Gate-Threshold Voltage (Maximum)		3V

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