SI2369DS MOSFET Transistor

The SI2369DS is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI2369DS transistor as follows.

SI2369DS Transistor Specification

Transistor Code		SI2369DS
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT23
Transistor SMD Code		H9*
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	7.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.029Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		150pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		24nS
Gate-Threshold Voltage (Maximum)		2.5V

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