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SI2367DS MOSFET Transistor

The SI2367DS is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI2367DS transistor as follows.

Circuit diagram symbol of the SI2367DS transistor

SI2367DS Transistor Specification

Transistor Code SI2367DS
Transistor Type MOSFET
Control Channel Type P-Channel
Package SOT-23
Transistor SMD Code H7
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 8V
Drain Current (Maximum) ID 2.8A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.066Ohm
Power Dissipation (Maximum) PD 0.96W
Drain-Source Capacitance 112pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 20nS
Gate-Threshold Voltage (Maximum) 1V

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