SI2351DS MOSFET Transistor

The SI2351DS is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI2351DS transistor as follows.

SI2351DS Transistor Specification

Transistor Code		SI2351DS
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT-23
Transistor SMD Code		G1
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	2.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.115Ohm
Power Dissipation (Maximum)	PD	1W
Drain-Source Capacitance		80pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		30nS
Gate-Threshold Voltage (Maximum)		1.5V

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