SI2335DS MOSFET Transistor

The SI2335DS is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI2335DS transistor as follows.

SI2335DS Transistor Specification

Transistor Code		SI2335DS
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT23
Transistor SMD Code		E5*
Drain-Source Voltage (Maximum)	VDS	12V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.045Ohm
Power Dissipation (Maximum)	PD	1.25W
Drain-Source Capacitance		260pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		15nS
Gate-Threshold Voltage (Maximum)		0.45V

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