SI2331DS MOSFET Transistor

The SI2331DS is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI2331DS transistor as follows.

SI2331DS Transistor Specification

Transistor Code		SI2331DS
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT-23
Transistor SMD Code		E1
Drain-Source Voltage (Maximum)	VDS	12V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	3.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.048Ohm
Power Dissipation (Maximum)	PD	0.71W
Drain-Source Capacitance		290pF
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		0.9V

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